AUTOMOTIVE GRADE
PD-96302A
AUIRFR6215
HEXFET® Power MOSFET
Features
l P-Channel
l Low On-Resistance
l Dynamic dV/dT Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
V(BR)DSS
D
-150V
0.295:
RDS(on) max.
G
ID
S
-13A
D
Description
Specifically designed for Automotive applications of
HEXFET® Power MOSFETs utilizes the latest processing
techniques to achieve low on-resistance per silicon area.
This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in Automotive and a
wide variety of other applications.
S
D
G
D-Pak
AUIRFR6215
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T A) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Max.
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
ch
ch
e
dh
ch
Units
-13
-9.0
-44
110
0.71
± 20
310
-6.6
11
5.0
-55 to + 175
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300
Thermal Resistance
Parameter
hj
Typ.
RθJC
Junction-to-Case
Junction-to-Ambient(PCB mount)
RθJA
RθJA
Junction-to-Ambient
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
i
Max.
Units
–––
–––
–––
1.4
50
110
°C/W
1
01/28/11
