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SI7850DP-T1

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Si7850DP Vishay Siliconix N-Channel 60-V (D-S) Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 0.022 at VGS = 10 V 10.3 0.031 at VGS = 4.5 V 60 ID (A) 8.7 PowerPAK SO-8 • TrenchFET® Power MOSFET • New Low Thermal Resistance PowerPAK® Package with Low 1.07-mm Profile • PWM Optimized for Fast Switching • 100 % Rg Tested • Lead (Pb)-free Version is RoHS Compliant Pb-free Available RoHS* COMPLIANT APPLICATIONS S 6.15 mm • Primary Side Switch for 24-V DC/DC Applications • Secondary Synchronous Rectifier 5.15 mm 1 S 2 S 3 G D 4 D 8 D 7 D 6 G D 5 Bottom View S Ordering Information: Si7850DP-T1 Si7850DP-T1—E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol VDS VGS Drain-Source Voltage Gate-Source Voltage TA = 25 °C TA = 85 °C Continuous Drain Current (TJ = 150 °C)a Continuous Source Current Pulsed Drain Current ID IS IDM IAS EAS Avalanche Currentb Single Avalanche Energyb TA = 25 °C TA = 85 °C Maximum Power Dissipationa PD TJ, Tstg Operating Junction and Storage Temperature Range 10 secs 10.3 7.5 3.7 4.5 2.3 Steady State 60 ± 20 6.2 4.5 1.5 40 15 11 1.8 0.9 – 55 to 150 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Symbol t ≤ 10 sec Steady State Steady State RthJA RthJC Typical 22 58 2.6 Maximum 28 70 3.3 Unit °C/W Notes a. Surface Mounted on 1" x 1" FR4 Board. b. Guaranteed by design, not subject to production testing. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 71625 S-52554-Rev. D, 19-Dec-05 www.vishay.com 1

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