FFP30S60S
30 A, 600 V STEALTHTM II Diode
Features
Description
• Stealth Recovery trr = 40 ns (@ IF = 30 A)
The FFP30S60S is a STEALTH™ II diode with soft recovery
characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
• Max Forward Voltage, VF = 2.6 V (@ TC = 25°C)
This device is intended for use as freewheeling of boost diode in
switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits
reducing power loss in the switching transistors.
• 600 V Reverse Voltage and High Reliability
• Avalanche Energy Rated
• RoHS Compliant
Applications
• General Purpose
• SMPS, Power Switching Circuits
• Boost Diode in Continuous Mode Power Factor Corrections
Pin Assigments
TO-220-2L
1. Cathode
1. Cathode
2. Anode
2. Anode
Absolute Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VRRM
Peak Repetitive Reverse Voltage
Parameter
Rating
600
Unit
V
VRWM
VR
Working Peak Reverse Voltage
600
V
DC Blocking Voltage
600
IF(AV)
Average Rectified Forward Current
V
30
IFSM
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
A
300
A
TJ, TSTG
Operating and Storage Temperature Range
@ TC = 103oC
o
-65 to +175
C
Thermal Characteristics
Symbol
RJC
Parameter
Max.
Maximum Thermal Resistance, Junction to Case
1.1
Unit
o
C/W
Package Marking and Ordering Information
Part Number
Top Mark
Package
Packing Method
Reel Size
Tape Width
Quantity
FFP30S60STU
FFP30S60S
TO-220-2L
Tube
N/A
N/A
50
©2007 Fairchild Semiconductor Corporation
FFP30S60S Rev.C2
1
www.fairchildsemi.com
FFP30S60S — STEALTH™ II Diode
November 2014
