EtronTech
EM6A9320BI
4M x 32 bit DDR Synchronous DRAM (SDRAM)
Etron Confidential
(Rev 2.1 Aug /2008)
Features
Overview
• Fast clock rate: 200 MHz
• Differential Clock CK & CK input
• 4 Bi-directional DQS. Data transactions on both
edges of DQS (1DQS / Byte)
• DLL aligns DQ and DQS transitions
• Edge aligned data & DQS output
• Center aligned data & DQS input
• 4 internal banks, 1M x 32-bit for each bank
• Programmable mode and extended mode registers
- CAS Latency: 3
- Burst length: 2, 4, 8
- Burst Type: Sequential & Interleave
• Full page burst length for sequential type only
• Start address of full page burst should be even
• All inputs except DQ’s & DM are at the positive
edge of the system clock
• No Write-Interrupted by Read function
• 4 individual DM control for write masking only
• Auto Refresh and Self Refresh
• 4096 refresh cycles / 32ms
• Power supplies :
VDD = 2.5V ± 5%
VDDQ = 2.5V ± 5%
• Interface : SSTL_2 I/O compatible
• Package: 144-ball LFBGA
- Pb and Halogen free
The EM6A9320 DDR SDRAM is a high-speed
CMOS double data rate synchronous DRAM containing
128 Mbits. It is internally configured as a quad 1M x 32
DRAM with a synchronous interface (all signals are
registered on the positive edge of the clock signal, CK).
Data outputs occur at both rising edges of CK and CK .
Read and write accesses to the SDRAM are burst
oriented; accesses start at a selected location and
continue for a programmed number of locations in a
programmed sequence.
Accesses begin with the registration of a
BankActivate command, which is then followed by a
Read or Write command.
The EM6A9320 provides programmable Read or
Write burst lengths of 2, 4, 8. An auto precharge
function may be enabled to provide a self-timed row
precharge that is initiated at the end of the burst
sequence.
The refresh functions, either Auto or Self Refresh
are easy to use.
In addition, EM6A9320 features programmable DLL
option. By having a programmable mode register and
extended mode register, the system can choose the
most suitable modes to maximize its performance.
These devices are well suited for applications
requiring high memory bandwidth, result in a device
particularly well suited to high performance main
memory and graphics applications.
Table1. Ordering Information
Part Number
Clock Frequency
EM6A9320BI-5MG/H
200MHz
BI: indicates LFBGA package
Data Rate
400Mbps/pin
Power Supply
VDD 2.5V, VDDQ 2.5V
Package
LFBGA
G: indicates Pb Free for LFBGA Package
H: indicates Pb and Halogen Free for LFBGA Package
Etron Technology, Inc.
No. 6, Technology Rd. V, Hsinchu Science Park, Hsinchu, Taiwan 30078, R.O.C.
TEL: (886)-3-5782345
FAX: (886)-3-5778671
Etron Technology, Inc. reserves the right to change products or specification without notice.
