FDS4675
40V P-Channel PowerTrench® MOSFET
General Description
Features
This P
-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gave drive
voltage ratings (4.5V – 20V).
• –11 A, –40 V
Applications
• High performance trench technology for extremely
low RDS(ON)
RDS(ON) = 0.013 Ω @ V GS = –10 V
RDS(ON) = 0.017 Ω @ V GS = –4.5 V
• Fast switching speed
• Power management
• High power and current handling capability
• Load switch
• Battery protection
DD
D
D
Pin 1 SO-8
Absolute Maximum Ratings
Symbol
3
2
8
G
S G
S
S
S S
S
4
6
SO-8
5
7
D
D
DD
1
TA=25oC unless otherwise noted
Drain-Source Voltage
Ratings
–40
Units
V DSS
Parameter
V GSS
Gate-Source Voltage
±20
V
ID
Drain Current
(Note 1a)
–11
–50
A
PD
Power Dissipation for Single Operation
(Note 1a)
2.4 (steady state)
W
(Note 1b)
1.4
– Continuous
– Pulsed
(Note 1c)
TJ , TSTG
Operating and Storage Junction Temperature Range
V
1.2
-55 to +175
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
62.5 (steady state), 50 (10 sec)
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1c)
125
°C/W
RθJ C
Thermal Resistance, Junction-to-Case
(Note 1)
25
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS4675
FDS4675
13’’
12mm
2500 units
©2001 Fairchild Semiconductor Corporation
FDS4675 Rev C(W)
FDS4675
February 2001