1S1885 ~ 1S1888
SILICON RECTIFIER DIODES
PRV : 100 ~ 600 Volts
Io : 1.0 Ampere
D2
FEATURES :
*
*
*
*
*
*
1.00 (25.4)
MIN.
0.161 (4.10)
0.154 (3.90)
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Pb / RoHS Free
0.284 (7.20)
0.268 (6.84)
1.00 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
MECHANICAL DATA :
* Case : D2 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.465 gram
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specifie.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum Average Forward Current Ta = 65 °C
SYMBOL 1S1885
VRRM
IF
Maximum Peak One Cycle Surge Forward Current
100
1S1886
1S1887
1S1888
UNIT
200
400
600
V
1.0
A
60 (50Hz)
IFSM
(Non-repetitive)
A
66 (60Hz)
Maximum Forward Voltage at I F = 1.5 A.
VF
1.2
Maximum Repetitive Peak Reverse Current
IR
10
IR(H)
400 (Tj = 150 °C)
Rth (j-a)
100
°C/W
Junction Temperature Range
TJ
- 40 to + 150
°C
Storage Temperature Range
TSTG
- 40 to + 150
°C
(V RRM = Rated)
Maximum Thermal Resistance (Junction to Ambient)
Page 1 of 2
V
μA
Rev. 02 : March 25, 2005
