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CA3096AEX
CA3096AEX Transistors Independent Transistor Array Military/High-RelN Number of Devices5 Type (NPN/PNP) V(BR)CEO (V)40 V(BR)CBO (V) I(C) Max. (A)50m P(D) Max. (W)750m Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)125 I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.20 h(FE) Max. Current gain. @I(C) (A) (Test Condition)1.0m @V(CE) (V) (Test Condition)5.0 f(T) Min. (Hz) Transition Freq6.8MÂ @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) Emitter-Base Diode (Y/N) Semiconductor Material Package StyleDIP
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