Photomicrosensor (Reflective)
EE-SY124
I Dimensions
I Features
Note: All units are in millimeters unless otherwise indicated.
• Ultra-compact model.
I Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Rated value
Forward current
50 mA (see note 1)
IFP
1 A (see note 2)
Reverse voltage
Detector
IF
Pulse forward
current
Emitter
VR
4V
IC
20 mA
Collector
dissipation
PC
75 mW (see note 1)
Ambient
Operating
temperature Storage
Topr
–25°C to 85°C
Tstg
–40°C to 100°C
Soldering temperature
Tsol
260°C (see note 3)
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
Internal Circuit
C
Unless otherwise specified, the
tolerances are ±0.15 mm.
Terminal No.
5V
Collector current
A
30 V
Emitter–Collector VECO
voltage
K
Collector–Emitter VCEO
voltage
E
I Ordering Information
Name
A
K
C
E
Description
Anode
Cathode
Collector
Model
Emitter
Photomicrosensor (reflective)
EE-SY124
I Electrical and Optical Characteristics (Ta = 25°C)
Item
Symbol
Value
Condition
VF
1.2 V typ., 1.4 V max.
IF = 20 mA
IR
0.01 µA typ., 10 µA max.
VR = 4 V
Peak emission wavelength
Detector
Forward voltage
Reverse current
Emitter
λP
950 nm typ.
IF = 4 mA
Light current
IL
50 µA min., 300 µA max.
IF = 4 mA, VCE = 2 V
Aluminum-deposited surface,
d = 1 mm (see note)
VCE = 10 V, 0 lx
Dark current
ID
2 nA typ., 200 nA max.
Leakage current
ILEAK
200 nA max.
IF =4 mA, VCE = 2 V with no reflection
Collector–Emitter saturated
voltage
VCE (sat)
---
---
Peak spectral sensitivity
wavelength
λP
930 nm typ.
VCE = 10 V
Rising time
tr
35 µs typ.
VCC = 2 V, RL = 1 kΩ, IL = 100 µA
Falling time
tf
25 µs typ.
VCC = 2 V, RL = 1 kΩ, IL = 100 µA
Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object.
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Photomicrosensor (Reflective) EE-SY124