Si7489DP
Vishay Siliconix
P-Channel 100-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) (Ω)
ID (A)a
0.041 at VGS = - 10 V
- 28
0.047 at VGS = - 4.5 V
- 28
VDS (V)
- 100
Qg (Typ.)
54 nC
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET
PowerPAK SO-8
S
6.15 mm
S
5.15 mm
1
S
2
S
3
G
4
G
D
8
D
7
D
6
D
5
Bottom View
D
Ordering Information: Si7489DP-T1-E3 (Lead (Pb)-free)
Si7489DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Pulsed Drain Current
Limit
- 100
± 20
IDM
TC = 25 °C
TA = 25 °C
IS
Avalanche Current
Single-Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)d, e
V
- 28a
- 24.9a
- 7.8b, c
- 6.2b, c
- 40
ID
Continuous Source-Drain Diode Current
Unit
- 28a
- 4.3b, c
- 35
61
83
53
5.2b, c
3.3b, c
- 55 to 150
260
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
b, f
t ≤ 10 s
Steady State
Symbol
RthJA
RthJC
Typical
19
1.2
Maximum
24
1.5
Unit
Maximum Junction-to-Ambient
°C/W
Maximum Junction-to-Case (Drain)
Notes:
a. Package Limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 65 °C/W.
Document Number: 73436
S09-0271-Rev. C, 16-Feb-09
www.vishay.com
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