This product complies with the RoHS Directive (EU 2002/95/EC).
Power Transistors
2SD1266, 2SD1266A
Silicon NPN triple diffusion planar type
For power amplification
Unit: mm
10.0±0.2
Rating
60
V
2SD1266A
Emitter-base voltage (Collector open)
80
VCEO
V
VEBO
Peak collector current
ICP
PC
6
V
3
IC
A
5
4.2±0.2
0.5+0.2
–0.1
0.8±0.1
2.54±0.3
5.08±0.5
A
35
1.3±0.2
1.4±0.1
80
Collector current
TC = 25°C
60
14.0±0.5
2SD1266
Collector-emitter voltage 2SD1266
(Base open)
2SD1266A
Collector power
dissipation
7.5±0.2
Unit
VCBO
φ 3.1±0.1
Solder Dip
(4.0)
Collector-base voltage
(Emitter open)
Symbol
2.7±0.2
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Parameter
16.7±0.3
■ Absolute Maximum Ratings Ta = 25°C
4.2±0.2
5.5±0.2
M
Di ain
sc te
on na
tin nc
ue e/
d
• High forward current transfer ratio hFE which has satisfactory linearity
• Low collector-emitter saturation voltage VCE(sat)
• Full-pack package which can be installed to the heat sink with one screw
0.7±0.1
■ Features
W
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
1 2 3
2.0
150
Junction temperature
Tj
Storage temperature
Tstg
°C
−55 to +150
°C
■ Electrical Characteristics Ta = 25°C ± 3°C
Symbol
ce
/D
isc
on
tin
VCEO
2SD1266A
Collector-emitter voltage
(Base open)
Conditions
IC = 30 mA, IB = 0
2SD1266
ue
Parameter
Min
Typ
Max
60
Unit
V
80
VBE
Base-emitter voltage
Collector-emitter cutoff
current (E-B short)
en
1.8
V
ICES
VCE = 60 V, VBE = 0
200
µA
VCE = 80 V, VBE = 0
200
VCE = 30 V, IB = 0
300
VCE = 60 V, IB = 0
300
2SD1266A
2SD1266
an
Collector-emitter cutoff
current (Base open)
2SD1266
VCE = 4 V, IC = 3 A
ICEO
2SD1266A
int
Ma
Collector-emitter saturation voltage
VEB = 6 V, IC = 0
VCE = 4 V, IC = 1 A
70
hFE2
Forward current transfer ratio
IEBO
hFE1 *
Emitter-base cutoff current (Collector open)
VCE = 4 V, IC = 3 A
µA
10
VCE(sat)
1
1.2
IC = 3 A, IB = 0.375 A
mA
320
V
Transition frequency
fT
VCE = 10 V, IC = 0.5 A, f = 10 MHz
30
MHz
Turn-on time
ton
IC = 1 A, IB1 = 0.1 A, IB2 = − 0.1 mA
0.5
µs
Storage time
tstg
VCC = 50 V
2.5
µs
0.4
µs
Fall time
tf
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
O
hFE1
70 to 150
120 to 250
160 to 320
Publication date: April 2003
SJD00283BED
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