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DAP222M
DAP222M Data sheet Switching Diode (High speed switching) ● Outline VRM 80 V IFM 300 mA Io 100 mA IFSM 4000 mA ● Features ● Inner Circuit High reliability Small mold type High Speed switching ● Application ● Packaging Specifications Packing Embossed T ape Reel Size(mm) 180 T aping Width(mm) 8 Basic Ordering Unit(pcs) 8000 T aping Code T2L Marking P High speed switching ● Structure Epitaxial planar ● Absolute Maximum Ratings (Ta = 25ºC) Parameter Symbol Conditions Limits Unit Reverse voltage Repetitive peak reverse voltage Average rectified forward current Forward current Peak forward surge current Power dissipation * Junction temperature Storage temperature VR V RM Io IFM IFSM PD Tj Tstg t=1μs - 80 80 100 300 4000 150 150 -55 ～ 150 V V mA mA mA mW ℃ ℃ *2 elements total ● Characteristics (Ta = 25ºC) Parameter Forward voltage Reverse current Capacitance between terminals Reverse recovery time Symbol Conditions VF IR Ct trr IF=100mA V R=70V V R=6.0V f=1.0MHz V R=6.0V IF=5.0mA RL=50Ω Value per element Min. Typ. Max. Unit - - 1.2 0.1 3.5 4.0 V μA pF ns ※Caution： static electricity www.rohm.com 1/4 © 2016 ROHM Co., Ltd. All rights reserved. 2016/03/17_Rev.001
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