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NTHS2101PT1G

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仕様・特性

NTHS2101P Power MOSFET −8.0 V, −7.5 A P−Channel ChipFETt Features • Offers an Ultra Low RDS(on) Solution in the ChipFET Package • Miniature ChipFET Package 40% Smaller Footprint than TSOP−6 • • • • • making it an Ideal Device for Applications where Board Space is at a Premium Low Profile (<1.1 mm) Allows it to Fit Easily into Extremely Thin Environments such as Portable Electronics Designed to Provide Low RDS(on) at Gate Voltage as Low as 1.8 V, the Operating Voltage used in many Logic ICs in Portable Electronics Simplifies Circuit Design since Additional Boost Circuits for Gate Voltages are not Required Operated at Standard Logic Level Gate Drive, Facilitating Future Migration to Lower Levels using the same Basic Topology Pb−Free Package is Available http://onsemi.com V(BR)DSS Ultra Low RDS(on) TYP ID MAX 19 mW @ −4.5 VGS −8.0 V −7.5 A 25 mW @ −2.5 VGS 34 mW @ −1.8 VGS S G Applications • Optimized for Battery and Load Management Applications in • • Portable Equipment such as MP3 Players, Cell Phones, Digital Cameras, Personal Digital Assistant and other Portable Applications Charge Control in Battery Chargers Buck and Boost Converters D P−Channel MOSFET ChipFET CASE 1206A STYLE 1 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage VDSS −8.0 Vdc Gate−to−Source Voltage − Continuous VGS "8.0 Vdc ID −5.4 −7.5 A Drain Current − Continuous − 5 seconds Is Thermal Resistance (Note 1) Junction−to−Ambient, 5 sec Junction−to−Ambient, Continuous Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds RqJA TL −1.1 October, 2004 − Rev. 4 D 1 8 D 7 2 D 2 7 6 3 D 3 5 4 G 4 A 6 5 D4 = Specific Device Code M = Month Code °C/W 50 95 ORDERING INFORMATION °C 260 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq [1 oz] including traces). © Semiconductor Components Industries, LLC, 2004 1 S W 1.3 2.5 0.7 1.3 8 D PD Continuous Source Current D D4 M Total Power Dissipation Continuous @ TA = 25°C (5 sec) @ TA = 25°C Continuous @ 85°C (5 sec) @ 85°C MARKING DIAGRAM PIN CONNECTIONS 1 Package Shipping† NTHS2101PT1 ChipFET 3000/Tape & Reel NTHS2101PT1G ChipFET (Pb−Free) 3000/Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NTHS2101P/D

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