NTHS2101P
Power MOSFET
−8.0 V, −7.5 A P−Channel ChipFETt
Features
• Offers an Ultra Low RDS(on) Solution in the ChipFET Package
• Miniature ChipFET Package 40% Smaller Footprint than TSOP−6
•
•
•
•
•
making it an Ideal Device for Applications where Board Space is at a
Premium
Low Profile (<1.1 mm) Allows it to Fit Easily into Extremely Thin
Environments such as Portable Electronics
Designed to Provide Low RDS(on) at Gate Voltage as Low as 1.8 V, the
Operating Voltage used in many Logic ICs in Portable Electronics
Simplifies Circuit Design since Additional Boost Circuits for Gate
Voltages are not Required
Operated at Standard Logic Level Gate Drive, Facilitating Future
Migration to Lower Levels using the same Basic Topology
Pb−Free Package is Available
http://onsemi.com
V(BR)DSS
Ultra Low RDS(on) TYP
ID MAX
19 mW @ −4.5 VGS
−8.0 V
−7.5 A
25 mW @ −2.5 VGS
34 mW @ −1.8 VGS
S
G
Applications
• Optimized for Battery and Load Management Applications in
•
•
Portable Equipment such as MP3 Players, Cell Phones, Digital
Cameras, Personal Digital Assistant and other Portable Applications
Charge Control in Battery Chargers
Buck and Boost Converters
D
P−Channel MOSFET
ChipFET
CASE 1206A
STYLE 1
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
−8.0
Vdc
Gate−to−Source Voltage − Continuous
VGS
"8.0
Vdc
ID
−5.4
−7.5
A
Drain Current
− Continuous
− 5 seconds
Is
Thermal Resistance (Note 1)
Junction−to−Ambient, 5 sec
Junction−to−Ambient, Continuous
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
RqJA
TL
−1.1
October, 2004 − Rev. 4
D
1
8
D
7
2
D
2
7
6
3
D
3
5
4
G
4
A
6
5
D4 = Specific Device Code
M = Month Code
°C/W
50
95
ORDERING INFORMATION
°C
260
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq
[1 oz] including traces).
© Semiconductor Components Industries, LLC, 2004
1
S
W
1.3
2.5
0.7
1.3
8
D
PD
Continuous Source Current
D
D4 M
Total Power Dissipation
Continuous @ TA = 25°C
(5 sec) @ TA = 25°C
Continuous @ 85°C
(5 sec) @ 85°C
MARKING
DIAGRAM
PIN
CONNECTIONS
1
Package
Shipping†
NTHS2101PT1
ChipFET
3000/Tape & Reel
NTHS2101PT1G
ChipFET
(Pb−Free)
3000/Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NTHS2101P/D