SFH6916
Phototransistor Optocoupler
Quad Miniflat Package
.
FEATURES
• Current Transfer Ratio
– SFH6916, 50%–300%
• SOP (Small Outline Package)
• Isolation Test Voltage, 3750 VRMS (1.0 s)
• High Collector-Emitter Voltage, VCEO=70 V
• Low Saturation Voltage
• Fast Switching Times
• Field-Effect Stable by TRIOS
(TRansparent IOn Shield)
• Temperature Stable
• Low Coupling Capacitance
• End-Stackable, 0.050" (1.27 mm) Spacing
• Underwriters Lab File #52744
DESCRIPTION
The SFH6916 family has a GaAs infrared emitting
diode emitter, which is optically coupled to a silicon
planar phototransistor detector, and is incorporated in
a 16 pin 50 mil lead pitch miniflat package. It features
a high current transfer ratio, low coupling capacitance,
and high isolation voltage.
The coupling devices are designed for signal transmission between two electrically separated circuits.
Dimensions in inches (mm)
Anode 1
16 Collector
Cathode 2
15 Emitter
Anode 3
14 Collector
Cathode 4
13 Emitter
Anode 5
0.19 (4.83)
0.17 (4.32)
12 Collector
Cathode 6
11 Emitter
Anode 7
10 Collector
Cathode 8
0.434 (11.02)
0.414 (10.52)
0.055 (1.40)
0.045 (1.14)
40°
10°
0.008 (0.20)
0.004 (0.10)
0.080 (2.03)
0.075 (1.91)
0.018 (0.46)
0.014 (0.36)
0.220 (5.59)
0.200 (5.08)
0.017 (0.43)
0.013 (0.33)
0.034 (0.87)
0.024 (0.61)
9 Emitter
0.000 (0.00)
0.005 (0.13)
0.200 (5.08)
0.220 (5.59)
0.280 (7.11)
0.260 (6.60)
Absolute Maximum Ratings, TA=25°C (except where noted)
Emitter
Reverse Voltage ................................................................................ 6.0 V
DC Forward Current........................................................................ 50 mA
Surge Forward Current (tP≤10 µs) ..................................................... 2.5 A
Total Power Dissipation per channel ..............................................80 mW
Detector
Collector-Emitter Voltage ................................................................... 70 V
Emitter-Collector Voltage .................................................................. 7.0 V
Collector Current............................................................................. 50 mA
Collector Current (tP≤1.0 ms) ........................................................ 100 mA
Total Power Dissipation per channel ............................................150 mW
Package
Isolation Test Voltage between Emitter and
Detector (1.0 s)..................................................................... 3750 VRMS
Creepage.................................................................................. ≥5.33 mm
Clearance ................................................................................. ≥5.08 mm
Comparative Tracking Index
per DIN IEC 112/VDE0 303, part 1 .................................................≥175
Isolation Resistance
VIO=500 V, TA=25°C ................................................................. ≥1012 Ω
VIO=500 V, TA=100°C ............................................................... ≥1011 Ω
Storage Temperature Range .............................................. –55 to +125°C
Ambient Temperature Range ............................................. –55 to +100°C
Junction Temperature ......................................................................100°C
Soldering Temperature (max. 10 s Dip Soldering
Distance to Seating Plane ≥1.5 mm) ............................................260°C
Total Power Dissipation..................................................................70 mW
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–315
March 5, 2000-02
