This product complies with the RoHS Directive (EU 2002/95/EC).
Darlington Phototransistors
PNA2W01M (PN207)
Silicon planar type
For optical control systems
Features
M
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High sensitivity
Easy to combine with red and infrared light emitting diodes
Small size designed for easier mounting to printed circuit board
Absolute Maximum Ratings Ta = 25°C
Symbol
Rating
Unit
Collector-emitter voltage (Base open)
VCEO
20
V
Emitter-collector voltage (Base open)
VECO
5
V
IC
30
mA
PC
100
mW
Topr
–25 to +85
°C
Tstg
–30 to +100
°C
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
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Parameter
Electrical-Optical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Photocurrent *1
IL
Collector-emitter cutoff current (Base open)
Collector-emitter saturation voltage
VCE(sat)
Peak sensitivity wavelength *1
ue
λPD
on
tin
Half-power angle
θ
ce
/D
isc
Rise time *2
an
Fall time *2
tr
tf
Min
0.5
VCE = 10 V, L = 2 lx
Typ
Max
3.0
Unit
mA
VCE = 10 V
0.1
0.5
µA
IL = 1 mA, L = 100 lx
0.7
1.5
V
VCE = 10 V
800
nm
The angle when the photocurrent is
halved
18
°
200
µs
200
µs
VCC = 10 V, IL = 5 mA, RL = 100 W
int
en
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%.
This device is designed by disregarding radiation.
*1:Source: Tungsten lamp (color temperature 2 856K)
*2: Switching time measurement circuit
Ma
Note) 1.
2.
3.
4.
ICEO
Conditions
Sig. in
VCC
(Input pulse)
λPD = 800 nm
50 Ω
Sig. out
RL
90%
10%
(Output pulse)
tr
tr : Rise time
tf : Fall time
tf
Note) The part number in the parenthesis shows conventional part number.
Publication date: October 2008
SHE00026CED
1