Power Transistors
2SC3944, 2SC3944A
Silicon NPN epitaxial planar type
For low-frequency driver and high power amplification
Complementary to 2SA1535 and 2SA1535A
5.5±0.2
Symbol
Rating
14.0±0.5
Unit
VCBO
150
2SC3944A
VCEO
Emitter-base voltage (Collector open)
VEBO
IC
Peak collector current
ICP
TC = 25°C
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
150
V
180
Collector current
Collector power
2.54±0.3
5.08±0.5
1 2 3
180
Collector-emitter voltage 2SC3944
(Base open)
2SC3944A
PC
dissipation
5
0.5+0.2
–0.1
0.8±0.1
V
2SC3944
Collector-base voltage
(Emitter open)
1.3±0.2
1.4±0.1
Solder Dip
(4.0)
■ Absolute Maximum Ratings Ta = 25°C
Parameter
φ 3.1±0.1
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16.7±0.3
• Excellent collector current IC characteristics of forward current
transfer ratio hFE
• High transition frequency fT
• A complementary pair with 2SA1535 and 2SA1535A, is optimum
for the driver stage of a 60 W to 100 W output amplifier
• Full-pack package which can be installed to the heat sink with one screw
2.7±0.2
7.5±0.2
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■ Features
4.2±0.2
4.2±0.2
0.7±0.1
Unit: mm
10.0±0.2
V
1
A
1.5
A
15
W
2.0
Tj
Storage temperature
Tstg
150
°C
−55 to +150
°C
ue
Junction temperature
Parameter
Symbol
2SC3944
2SC3944A
an
Collector-emitter voltage
(Base open)
ce
/D
isc
on
tin
■ Electrical Characteristics Ta = 25°C ± 3°C
en
Emitter-base voltage (Collector open)
2SC3944
(Emitter open)
2SC3944A
Ma
int
Collector-base cutoff current
Conditions
Min
Typ
Max
VCEO
IC = 1 mA, IB = 0
VEBO
IE = 10 µA, IC = 0
ICBO
VCB = 150 V, IE = 0
10
VCB = 180 V, IE = 0
Unit
10
150
V
180
5
V
hFE1 *
VCE = 10 V, IC = 150 mA
65
160
hFE2
VCE = 5 V, IC = 500 mA
50
100
Collector-emitter saturation voltage
VCE(sat)
IC = 500 mA, IB = 50 mA
Base-emitter saturation voltage
VBE(sat)
IC = 500 mA, IB = 50 mA
VCE = 10 V, IC = 50 mA, f = 10 MHz
200
VCB = 10 V, IE = 0, f = 1 MHz
30
µA
Forward current transfer ratio
Transition frequency
fT
Collector output capacitance
(Common base, input open circuited)
Cob
330
0.5
2.0
V
1.0
2.0
V
MHz
50
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
P
Q
R
hFE1
65 to 110
90 to 155
130 to 220
Publication date: January 2003
SJD00117BED
S
185 to 330
1