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2MBI200N-060
2MBI200N060 Transistors Independent IGBT Power Module Isolated Case (Y/N)Yes Circuits Per Package2 V(BR)CES (V)600 V(BR)GES (V) I(C) Max. (A)200 Absolute Max. Power Diss. (W)800 Minimum Operating Temp (øC) Maximum Operating Temp (øC) Thermal Resistance Junc-Case.40 I(CES) Min. (A) @V(CES) (V) (Test Condition) I(GES) Max. (A) @V(GES) (V) (Test Condition) V(CE)sat Max. (V)2.8 @I(C) (A) (Test Condition)200 @V(GE) (Test Condition)15 V(GE)th Max. (V) @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) g(fe) Min. (S) Trans. admitt. g(fe) Max. (S) Trans. admitt.
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