PEDD514265ESL-01
This version : Jan. 2001
Semiconductor
MSM514265E/ESL
Preliminary
262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
DESCRIPTION
The MSM514265E/ESL is a 262,144-word × 16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS
technology. The MSM514265E/ESL achieves high integration, high-speed operation, and low-power
consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal CMOS
process. The MSM514265E/ESL is available in a 40-pin plastic SOJ or 44/40-pin plastic TSOP. The
MSM514265ESL (the Self-refresh version) is specially designed for lower-power applications.
FEATURES
•
262,144-word × 16-bit configuration
•
Single 5V power supply, ±10% tolerance
•
Input
: TTL compatible, low input capacitance
•
Output
: TTL compatible, 3-state
•
Refresh
: 512 cycles/8ms, 512 cycles/128 ms (SL version)
•
Fast page mode with EDO, read modify write capability
•
CAS before RAS refresh, hidden refresh, RAS-only refresh capability
•
CAS before RAS self-refresh capability (SL version)
•
Package options:
40-pin 400mil plastic SOJ
(SOJ40-P-400-1.27)
(Product : MSM514265E/ESL-xxJS)
44/40-pin 400mil plastic TSOP (TSOPII44/40-P-400-0.80-K) (Product : MSM514265E./ESL-xxTS-K)
xx indicates speed rank.
PRODUCT FAMILY
Access Time (Max.)
Family
MSM514265E/ESL
Cycle Time
Power Dissipation
tRAC
tAA
tCAC
tOEA
(Min.)
Operating (Max.)
Standby (Max.)
60ns
30ns
15ns
15ns
104ns
633mW
70ns
35ns
20ns
20ns
124ns
578mW
5.5mW/
1.1mW (SL version)
