DATA SHEET
SILICON POWER TRANSISTOR
2SC2335
NPN SILICON TRIPLE DIFFUSED TRANSISTOR
FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING
The 2SC2335 is a mold power transistor developed for high-speed
ORDERING INFORMATION
high-voltage switching, and is ideal for use as a driver in devices such
Part No.
Package
as switching regulators, DC/DC converters, and high-frequency power
2SC2335
TO-220AB
amplifiers.
FEATURES
(TO-220AB)
• Low collector saturation voltage: VCE(sat) = 1.0 V MAX. @IC = 3.0 A
• Fast switching speed: tf = 1.0 µs MAX. @IC = 3.0 A
• Wide base reverse-bias SOA: VCEX(SUS)1 = 450 V MIN. @IC = 3.0 A
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
°
Ratings
Unit
Collector to base voltage
Parameter
VCBO
500
V
Collector to emitter voltage
VCEO
400
V
Emitter to base voltage
VEBO
7.0
V
Collector current (DC)
IC(DC)
7.0
A
Collector current (pulse)
IC(pulse)
15
A
Base current (DC)
Symbol
Conditions
PW ≤ 300 µs,
duty cycle ≤ 10%
IB(DC)
Total power dissipation
PT
Junction temperature
Tj
Storage temperature
Tstg
3.5
TC = 25°C
TA = 25°C
A
40
W
1.5
W
150
−55 to +150
°C
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14861EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998
