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部品型式

IRFS4321PBF

製品説明
仕様・特性

PD - 97105C IRFS4321PbF IRFSL4321PbF Applications Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits l Benefits l Low RDSON Reduces Losses l Low Gate Charge Improves the Switching Performance l Improved Diode Recovery Improves Switching & EMI Performance l 30V Gate Voltage Rating Improves Robustness l Fully Characterized Avalanche SOA HEXFET® Power MOSFET VDSS RDS(on) typ. max. ID 150V 12m: 15m: 85A c D D G D G D S G D S D2Pak TO-262 IRFS4321PbF IRFSL4321PbF S G D S Gate Drain Source Absolute Maximum Ratings Symbol ID @ TC = 25°C Parameter Max. Units 85 c Continuous Drain Current, VGS @ 10V A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 60 IDM Pulsed Drain Current d 330 PD @TC = 25°C Maximum Power Dissipation 350 W Linear Derating Factor 2.3 Gate-to-Source Voltage Single Pulse Avalanche Energy e ±30 W/°C V 120 mJ -55 to + 175 °C VGS EAS (Thermally limited) TJ Operating Junction and TSTG Storage Temperature Range 300 Soldering Temperature, for 10 seconds (1.6mm from case) Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case g ––– 0.43* °C/W RθJA Junction-to-Ambient g ––– 40 * RθJC (end of life) for D2Pak and TO-262 = 0.65°C/W. This is the maximum measured value after 1000 temperature cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium. Notes  through … are on page 2 www.irf.com 1 12/9/10

ブランド

IR

会社名

International Rectifier

本社国名

U.S.A

事業概要

パワー・マネジメント向けの半導体製品を中心とする電気機器の製造販売やソリューションを提供する。

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