2SK1478
Switching Diodes
MA152K
Silicon epitaxial planer type
Unit : mm
For switching circuits
+0.2
2.8 –0.3
+0.25
0.65±0.15
1.5 –0.05
0.65±0.15
1.45
1
0.95
3
+0.1
0.4 –0.05
Small capacity between pins, Ct
+0.2
q
2.9 –0.05
Short reverse recovery period trr
1.9±0.2
q
0.95
s Features
Symbol
+0.1
0.16 –0.06
0 to 0.1
0.1 to 0.3
0.4±0.2
s Absolute Maximum Ratings (Ta= 25˚C)
Parameter
0.8
1.1 –0.1
+0.2
2
Unit
Rating
Reverse voltage (DC)
VR
Peak reverse voltage
VRM
80
V
Forward current (DC)
IF
100
1 : Anode
2 : NC
JEDEC : TO-236
3 : Cathode
EIAJ : SC-59
Mini Type Package (3-pin)
mA
V
80
Peak forward current
IFM
225
mA
Marking Symbol : MI
Non-repetitive peak forward surge current
IFSM *
500
mA
Junction temperature
Tj
150
˚C
s Internal Connection
Storage temperature
Tstg
– 55 to +150
˚C
1
* t=1s
3
2
s Electrical Characteristics (Ta= 25˚C)
Parameter
min
Reverse current (DC)
IR
VF
Reverse voltage (DC)
VR
IR=100µA
Terminal capacitance
Ct
VR= 0V, f=1MHz
Reverse recovery time
trr *
0.95
Note 1 : Rated input/output frequency : 100MHz
2 : * trr measuring circuit
s Marking
Input Pulse
tp
10%
A
VR
Pulse Generator
PG-10N
Rs=50Ω
W.F.Analyzer
SAS-8130
Ri=50Ω
Output Pulse
MI
t
IF
trr
t
90%
tp=2µs
tr=0.35ns
δ=0.05
pF
ns
V
IF=10mA, VR= 6V
tr
V
80
Irr= 0.1 · IR, RL=100Ω
Bias Insertion
Unit N-50BU
µA
1.2
3
IF=100mA
Unit
2
VR= 75V
Forward voltage (DC)
typ
max
0.1
Condition
Symbol
Irr=0.1 · IR
IF=10mA
VR=6V
RL=100Ω