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SI1300BDL-T1-E3

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Si1300BDL Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.85 at VGS = 4.5 V 0.4 1.08 at VGS = 2.5 V 0.35 VDS (V) 20 Qg (Typ.) 0.335 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC SC-70 (3-LEADS) D G 1 3 S D KE XX YY Marking Code G Lot Traceability and Date Code 2 Part # Code S Top View Ordering Information: Si1300BDL-T1-E3 (Lead (Pb)-free) Si1300BDL-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS Unit ±8 TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C 0.4 0.32 ID 0.37b, c 0.30b, c TA = 70 °C Pulsed Drain Current IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 70 °C TA = 25 °C 0.18 IS 0.14b, c 0.2 0.14 PD W 0.19 0.12b, c TA = 70 °C Operating Junction and Storage Temperature Range A 0.5 TC = 25 °C Maximum Power Dissipation V TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Symbol b, d Maximum Junction-to-Foot (Drain) Typical Maximum t5s RthJA 540 670 Steady State RthJF 450 570 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 360 °C/W. Document Number: 73557 S11-2000-Rev. D, 10-Oct-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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