Si1300BDL
Vishay Siliconix
N-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) ()
ID (A)a
0.85 at VGS = 4.5 V
0.4
1.08 at VGS = 2.5 V
0.35
VDS (V)
20
Qg (Typ.)
0.335
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
SC-70 (3-LEADS)
D
G
1
3
S
D
KE
XX
YY
Marking Code
G
Lot Traceability
and Date Code
2
Part # Code
S
Top View
Ordering Information: Si1300BDL-T1-E3 (Lead (Pb)-free)
Si1300BDL-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
Unit
±8
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
0.4
0.32
ID
0.37b, c
0.30b, c
TA = 70 °C
Pulsed Drain Current
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
TC = 70 °C
TA = 25 °C
0.18
IS
0.14b, c
0.2
0.14
PD
W
0.19
0.12b, c
TA = 70 °C
Operating Junction and Storage Temperature Range
A
0.5
TC = 25 °C
Maximum Power Dissipation
V
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Symbol
b, d
Maximum Junction-to-Foot (Drain)
Typical
Maximum
t5s
RthJA
540
670
Steady State
RthJF
450
570
Unit
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 360 °C/W.
Document Number: 73557
S11-2000-Rev. D, 10-Oct-11
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This document is subject to change without notice.
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