< Silicon RF Power MOS FET (Discrete) >
RD01MUS1
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W
DESCRIPTION
RD01MUS1 is a MOS FET type transistor specifically
designed for VHF/UHF RF amplifiers applications.
OUTLINE DRAWING
4.4+/-0.1
FEATURES
APPLICATION
3.9+/-0.3
LOT No.
0.8 MIN 2.5+/-0.1
High power gain:
Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz
High Efficiency: 65%typ.
1.5+/-0.1
1.6+/-0.1
TYPE NAME
1
0.
φ
1
2
1.5+/-0.1
3
0.4 +0.03
-0.05
1.5+/-0.1
0.4+/-0.07 0.5+/-0.07 0.4+/-0.07
For output stage of high power amplifiers in VHF/UHF
Band mobile radio sets.
0.1 MAX
Terminal No.
1 : GATE
2 : SOURSE
3 : DRAIN
UNIT : mm
RoHS COMPLIANT
RD01MUS1-101,T113 is a RoHS compliant products.
This product include the lead in high melting temperature type solders.
However, It is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
SYMBOL
VDSS
VGSS
Pch
Pin
ID
Tch
Tstg
Rth j-c
PARAMETER
Drain to source voltage
Gate to source voltage
Channel dissipation
Input Power
Drain Current
Channel Temperature
Storage temperature
Thermal resistance
(Tc=25°C UNLESS OTHERWISE NOTED)
CONDITIONS
Vgs=0V
Vds=0V
Tc=25°C
Zg=Zl=50
Junction to case
RATINGS
30
+/-10
3.6
100
600
150
-40 to +125
34.5
UNIT
V
V
W
mW
mA
°C
°C
°C/W
Note: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
IDSS
IGSS
Vth
Pout
D
Zero gate voltage drain current
Gate to source leak current
Gate threshold Voltage
Output power
Drain efficiency
(Tc=25°C, UNLESS OTHERWISE NOTED)
CONDITIONS
VDS=17V, VGS=0V
VGS=10V, VDS=0V
VDS=12V, IDS=1mA
VDD=7.2V, Pin=30mW
f=520MHz,Idq=100mA
Note: Above parameters, ratings, limits and conditions are subject to change.
Publication Date : Oct．2011
1
MIN
1.3
0.8
50
LIMITS
TYP
1.8
1.4
65
UNIT
MAX
50
1
2.3
-
uA
uA
V
W
%
