TPC6107
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIV)
TPC6107
Notebook PC Applications
Portable Equipment Applications
•
Unit: mm
Small footprint due to small and thin package
•
Low drain-source ON resistance: RDS (ON) = 40 mΩ (typ.)
•
High forward transfer admittance: |Yfs| = 9.6 S (typ.)
•
Low leakage current: IDSS = −10 µA (max) (VDS = −20 V)
•
Enhancement model: Vth = −0.5 to −1.2 V
(VDS = −10 V, ID = −200 µA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
−20
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
−20
V
Gate-source voltage
VGSS
±12
V
ID
−4.5
Pulse (Note 1)
IDP
−18
Drain power dissipation
(t = 5 s)
(Note 2a)
PD
2.2
W
Drain power dissipation
(t = 5 s)
(Note 2b)
PD
0.7
W
Single pulse avalanche energy (Note 3)
EAS
1.3
mJ
Avalanche current
IAR
−2.25
A
EAR
0.22
mJ
DC
Drain current
Repetitive avalanche energy
(Note 1)
(Note 4)
A
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-3T1A
Weight: 0.011 g (typ.)
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Circuit Configuration
6
5
4
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
1
2
3
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to ambient
(t = 5 s)
(Note 2a)
Rth (ch-a)
56.8
°C/W
Thermal resistance, channel to ambient
(t = 5 s)
(Note 2b)
Rth (ch-a)
178.5
°C/W
Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See the next page.
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2006-11-17
