CMF01
TOSHIBA Fast Recovery Diode
Silicon Diffused Type
CMF01
Switching Mode Power Supply Applications
DC/DC Converter Applications
4.7 ± 0.2
Suitable for high-density board assembly due to the use of a small
surface-mount package, M−FLATTM
3.8 ± 0.1
•
②
Absolute Maximum Ratings (Ta = 25°C)
①
Rating
Unit
Repetitive peak reverse voltage
VRRM
600
V
Average forward current
IF (AV)
2.0 (Note 1)
A
IFSM
30 (50 Hz)
A
Tj
−40 to 150
°C
Tstg
−40 to 150
0.16
°C
Peak one-cycle surge forward current
(non-repetitive)
Junction temperature
Storage temperature range
1.75 ± 0.1
+ 0.2
2.4 − 0.1
0.98 ± 0.1
Symbol
0 ~ 0.1
Characteristic
0.65 ± 0.2
Repetitive peak reverse voltage: VRRM = 600 V
• Average forward current: IF (AV) = 2.0 A
• Forward voltage: VFM = 2.0 V (max)
• Very fast reverse-recovery time: trr = 100 ns (max.)
0.65 ± 0.2
Unit: mm
① ANODE
② CATHODE
JEDEC
⎯
JEITA
Note 1: Tℓ =100°C
Device mounted on a ceramic board
Board size: 50 mm × 50 mm,
Soldering land size: 2 mm × 2 mm
Board thickness: 0.64 mm
Rectangular waveform (α = 180°)
⎯
TOSHIBA
3-4E1A
Weight: 0.023 g (typ.)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2008-05-13