SPP11N65C3,SPA11N65C3
SPI11N65C3
Cool MOS™ Power Transistor
V DS
• Ultra low gate charge
• Periodic avalanche rated
PG-TO262
0.38
Ω
ID
• New revolutionary high voltage technology
V
RDS(on)
Feature
650
11
A
PG-TO220FP
PG-TO220
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
Type
Package
Ordering Code
Marking
SPP11N65C3
PG-TO220
Q67040-S4557
11N65C3
SP000216318
11N65C3
Q67040-S4561
11N65C3
SPA11N65C3
PG-TO220FP
SPI11N65C3
PG-TO262
Maximum Ratings
Symbol
Parameter
Value
SPP_I
Continuous drain current
Unit
SPA
ID
A
TC = 25 °C
11
111)
TC = 100 °C
7
71)
33
33
Pulsed drain current, tp limited by T jmax
ID puls
A
Avalanche energy, single pulse
EAS
340
340
EAR
0.6
0.6
Avalanche current, repetitive tAR limited by T jmax
IAR
4
4
A
Gate source voltage
VGS
±20
±20
V
Gate source voltage AC (f >1Hz)
VGS
±30
±30
Power dissipation, T C = 25°C
Ptot
125
33
Operating and storage temperature
Tj , Tstg
mJ
ID=2.5A, V DD=50V
Avalanche energy, repetitive tAR limited by T jmax 2)
ID=4A, VDD=50V
Rev. 2.91
Page 1
-55...+150
W
°C
2009-11-30
