DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ607
SWITCHING
P-CHANNEL POWER MOS FET
ORDERING INFORMATION
DESCRIPTION
The 2SJ607 is P-channel MOS Field Effect Transistor designed
for high current switching applications.
PART NUMBER
PACKAGE
2SJ607
TO-220AB
FEATURES
2SJ607-S
TO-262
• Super low on-state resistance:
RDS(on)1 = 11 mΩ MAX. (VGS = −10 V, ID = −42 A)
RDS(on)2 = 16 mΩ MAX. (VGS = −4.0 V, ID = −42 A)
• Low input capacitance:
Ciss = 7500 pF TYP. (VDS = −10 V, VGS = 0 V)
• Built-in gate protection diode
2SJ607-ZJ
TO-263
2SJ607-Z
TO-220SMD
Note
Note TO-220SMD package is produced only in
Japan
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
−60
V
Gate to Source Voltage (VDS = 0 V)
VGSS
m 20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
m 83
A
Note1
ID(pulse)
m 332
A
Total Power Dissipation (TC = 25°C)
PT
160
W
Total Power Dissipation (TA = 25°C)
PT
1.5
W
Channel Temperature
Tch
150
°C
Drain Current (pulse)
Tstg
−55 to +150
°C
Single Avalanche Current
Note2
IAS
−50
A
Single Avalanche Energy
Note2
EAS
250
(TO-262)
mJ
Storage Temperature
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1%
2. Starting Tch = 25°C, VDD = −30 V, RG = 25 Ω, VGS = −20 → 0 V
(TO-263, TO-220SMD)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D14655EJ3V0DS00 (3rd edition)
Date Published July 2002 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
2000, 2001
