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BU4211G
Datasheet Voltage Detector IC Series Low Voltage Free Delay Time Setting CMOS Voltage Detector IC Series BU42xx series BU43xx series ●General Description ROHM’s BU42xx and BU43xx series are CMOS Voltage Detector ICs with adjustable output delay. It is a high-accuracy, low current consumption Voltage Detector IC series with a built-in delay circuit. The lineup was established with two output types (Nch open drain and CMOS output) and detection voltages range from 0.9V to 4.8V in increments of 0.1V, so that the series may be selected according to application. ●Features Delay Time Controlled by external Capacitor Two output types (Nch open drain and CMOS output) Ultra-low current consumption Wide operating temperature range Very small and low height package Package SSOP5 and SOP4 is similar to SOT-23-5 and SC-82 respectively (JEDEC) ●Key Specifications Detection voltage: 0.9V to 4.8V (Typ.) 0.1V steps High accuracy detection voltage: ±1.0% Ultra-low current consumption: 0.55µA (Typ.) Operating temperature range: -40°C to +125°C ●Package SSOP5: 2.90mm x 2.80mm x 1.25mm SOP4: 2.00mm x 2.10mm x 0.95mm VSOF5: 1.60mm x 1.60mm x 0.60mm ●Applications Circuits using microcontrollers or logic circuits that require a reset. ●Typical Application Circuit VDD1 VDD1 VDD2 RL RST BU42xx CIN CT CIN RST BU43xx Micro controller CT CL CL (Capacitor for noise filtering) (Capacitor for noise filtering) GND Open Drain Output type BU42xx series ●Connection Diagram & Pin Descriptions SSOP5 SOP4 N.C. CT TOP VIEW TOP VIEW VOUT 3 GND GND 4 N.C. Unconnected terminal 5 CT CMOS Output type BU43xx series VOUT 4 VSOF5 TOP VIEW CT 3 Lot. No 1 GND VDD GND PIN Symbol Function No. 1 VOUT Reset output 2 VDD Power supply voltage GND Marking Lot. No Marking Micro controller Capacitor connection terminal for output delay time 4 VOUT Marking 1 2 3 VOUT SUB CT 2 VDD PIN Symbol Function No. 1 GND GND 2 VDD Power supply voltage Capacitor connection 3 CT terminal for output delay time Reset output GND VDD 4 5 Lot. No PIN Symbol Function No. 1 VOUT Reset output 2 SUB Substrate* Capacitor connection 3 CT terminal for output delay time 4 VDD Power supply voltage 5 GND GND *Connect the substrate to VDD ○Product structure：Silicon monolithic integrated circuit . www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. TSZ22111・14・001 ○This product is not designed for protection against radioactive rays 1/13 TSZ02201-0R7R0G300050-1-2 18.Dec.2012 Rev.005
ROHM
ローム株式会社
日本
炭素皮膜抵抗の特許を元に創業した。社名のROHM（R:抵抗 Ohm:抵抗を示す単位）はそこに由来する。その後、大規模集積回路の製造を手がけ始め、現在は様々な機能を顧客の要望に応じてLSI上に集積するカスタムLSIが主力となっている。
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