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部品型式

2SK4042Q

製品説明
仕様・特性

2SK4042 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK4042 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.7 Ω (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 kΩ) VDGR 500 V Gate-source voltage VGSS ±30 V (Note 1) ID 8 Pulse (t = 1 ms) (Note 1) IDP 32 Drain power dissipation (Tc = 25°C) PD 40 W Single pulse avalanche energy (Note 2) EAS 312 mJ Avalanche current IAR 8 A Repetitive avalanche energy (Note 3) EAR 4 mJ Channel temperature Tch 150 °C Storage temperature range Tstg -55 to 150 °C DC Drain current A 1: Gate 2: Drain 3: Source JEDEC ― JEITA SC-67 TOSHIBA 2-10U1B Weight : 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/’’Derating Concept and Methods’’) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics 2 Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 3.125 °C/W Thermal resistance, channel to ambient Rth (ch-a) 62.5 °C/W Note 1: Ensure that the channel temperature does not exceed 150°C. 1 Note 2: VDD = 90 V, Tch = 25°C(initial), L = 8.3 mH, IAR = 8 A, RG = 25 Ω Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 1 3 2009-09-29

ブランド

TOSHIBA

会社名

株式会社 東芝セミコンダクター&ストレージ社

本社国名

日本

事業概要

半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI

供給状況

 
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