IPB80N06S2-08
IPP80N06S2-08, IPI80N06S2-08
OptiMOS® Power-Transistor
Product Summary
Features
V DS
V
7.7
mΩ
ID
• Automotive AEC Q101 qualified
55
R DS(on),max (SMD version)
• N-channel - Enhancement mode
80
A
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
PG-TO263-3-2
PG-TO220-3-1
PG-TO262-3-1
• Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested
Type
Package
Ordering Code
Marking
IPB80N06S2-08
PG-TO263-3-2
SP0002-18830
2N0608
IPP80N06S2-08
PG-TO220-3-1
SP0002-18826
2N0608
IPI80N06S2-08
PG-TO262-3-1
SP0002-18828
2N0608
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current1)
ID
Conditions
T C=25 °C, V GS=10 V
T C=100 °C,
V GS=10 V2)
Value
80
Unit
A
80
Pulsed drain current2)
I D,pulse
T C=25 °C
320
Avalanche energy, single pulse2)
E AS
I D= 80 A
450
mJ
Gate source voltage4)
V GS
±20
V
Power dissipation
P tot
215
W
Operating and storage temperature
T j, T stg
-55 ... +175
°C
T C=25 °C
IEC climatic category; DIN IEC 68-1
Rev. 1.0
55/175/56
page 1
2006-03-13
