2SK2865
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2865
Chopper Regulator, DC−DC Converter and Motor Drive
Applications
Low drain−source ON resistance
: RDS (ON) = 4.2 Ω (typ.)
High forward transfer admittance
Unit: mm
: |Yfs| = 1.7 S (typ.)
Low leakage current
: IDSS = 100 µA (max) (VDS = 600 V)
Enhancement mode
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
VDSS
600
V
Drain−gate voltage (RGS = 20 kΩ)
VDGR
600
V
Gate−source voltage
VGSS
±30
V
ID
2
A
Pulse (t = 1 ms)
(Note 1)
IDP
5
A
Pulse (t = 100 µs)
(Note 1)
IDP
8
A
Drain power dissipation (Tc = 25°C)
PD
20
W
JEITA
SC-64
Single pulse avalanche energy
(Note 2)
EAS
93
mJ
TOSHIBA
2-7B1B
Avalanche current
IAR
2
A
Repetitive avalanche energy (Note 3)
EAR
2
mJ
DC
Drain current
(Note 1)
Channel temperature
Tch
150
Tstg
−55~150
Max
Unit
Thermal resistance, channel to case
Rth (ch−c)
6.25
°C / W
Thermal resistance, channel to
ambient
Rth (ch−a)
125
Weight: 0.36 g (typ.)
°C
Symbol
―
°C
Storage temperature range
JEDEC
°C / W
Thermal Characteristics
Characteristics
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 41 mH, RG = 25 Ω, IAR = 2 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
1
2004-07-06
