New Product
Si4838BDY
Vishay Siliconix
N-Channel 12-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) (Ω)
ID (A)a
0.0027 at VGS = 4.5 V
34
0.0032 at VGS = 2.5 V
31
0.0040 at VGS = 1.8 V
28
VDS (V)
12
Qg (Typ.)
33 nC
•
•
•
•
Halogen-free
TrenchFET® Power MOSFET
100 % Rg Tested
100 % UIS Tested
APPLICATIONS
• Low VIN DC/DC
SO-8
D
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
G
Top View
S
Ordering Information: Si4838BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Pulsed Drain Current
Limit
12
±8
34
27
ID
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
mJ
W
2.50b, c
1.6b, c
- 55 to 150
TJ, Tstg
Operating Junction and Storage Temperature Range
A
2.2b, c
20
20
5.7
3.6
IS
Single Pulse Avalanche Current
Avalanche Energy
V
22.5b, c
18.0b, c
70
5.1
IDM
TC = 25 °C
TA = 25 °C
Continuous Source-Drain Diode Current
Unit
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Maximum Junction-to-Ambientb,d
t ≤ 10 s
RthJA
39
50
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
18
22
Unit
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
Document Number: 68964
S-82662-Rev. A, 03-Nov-08
www.vishay.com
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