V10P10
www.vishay.com
Vishay General Semiconductor
High Current Density Surface Mount
MOS Barrier Schottky Rectifier Ultra Low
VF = 0.453 V at IF = 5 A
FEATURES
TMBS® eSMP® Series
• Very low profile - typical height of 1.1 mm
Available
• Ideal for automated placement
K
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
1
• High efficiency operation
2
• Meets MSL level 1, per
LF maximum peak of 260 °C
SMPC (TO-277A)
K
• AEC-Q101 qualified available
- Automotive ordering code; base P/NHM3
Anode 1
Cathode
J-STD-020,
Anode 2
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
PRIMARY CHARACTERISTICS
IF(AV)
10 A
VRRM
100 V
IFSM
180 A
EAS
100 mJ
VF at IF = 10 A
0.574 V
TJ max.
150 °C
Package
TO-277A (SMPC)
Diode variations
Single die
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3_X - halogen-free, RoHS-compliant and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
V10P10
UNIT
V1010
Maximum repetitive peak reverse voltage
VRRM
100
V
Maximum average forward rectified current (fig. 1)
IF(AV)
10
A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
180
A
Non-repetitive avalanche energy at IAS = 2.0 A, TJ = 25 °C
EAS
100
mJ
Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C
IRRM
1.0
A
Operating junction temperature range
TJ
(1)
-40 to +175
°C
Storage temperature range
TSTG
-55 to +175
°C
Note
(1) The heat generated must be less than the thermal conductivity from junction to ambient: dP /dT < 1/R
D
J
θJA
Revision: 23-Jun-17
Document Number: 89006
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
