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GT40T301Q
GT40T301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T301 Parallel Resonance Inverter Switching Applications • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.25 μs (typ.) (IC = 40 A) FRD : trr = 0.7 μs (typ.) (di/dt = −20 A/μs) • Unit: mm Low saturation voltage: VCE (sat) = 3.7 V (typ.) (IC = 40 A) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage VCES 1500 V Gate-emitter voltage VGES ±25 V DC IC 40 1 ms ICP 80 DC IECF 30 1 ms IECPF 80 Collector power dissipation (Tc = 25°C) PC 200 W Junction temperature Tj 150 °C Tstg −55~150 °C Collector current Emitter-collector forward current Storage temperature range A JEDEC ― JEITA A ― TOSHIBA 2-21F2C Weight: 9.75 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit Marking Collector Part No. (or abbreviation code) TOSHIBA GT40T301 Gate Lot No. JAPAN A line indicates lead (Pb)-free package or lead (Pb)-free finish. Emitter 1 2006-11-01
TOSHIBA
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