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SI7370DP
Si7370DP New Product Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.011 @ VGS = 10 V 15.8 0.013 @ VGS = 6 V 60 ID (A) 14.5 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile D PWM Optimized for Fast Switching APPLICATIONS D Primary Side Switch for 24-V DC/DC Applications D Secondary Synchronous Rectifier PowerPAKt SO-8 D S 6.15 mm 5.15 mm 1 S 2 S 3 G G 4 D 8 D 7 D S 6 D 5 N-Channel MOSFET Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 60 Gate-Source Voltage VGS "20 Unit Continuous Drain Current (TJ = 150_C)a _ TA = 25_C TA = 70_C Continuous Source Current 15.8 ID IS Pulsed Drain Current V 9.6 12.6 7.7 4.7 1.7 IDM A 50 Avalanche Currentb IAS 50 Single Avalanche Energyb EAS 125 TA = 25_C Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range mJ 5.2 PD 1.9 3.3 1.25 TJ, Tstg W _C –55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Case (Drain) Steady State Steady State RthJA RthJC Maximum 19 t v 10 sec Maximum Junction-to-Ambienta Typical 24 52 65 1.5 Unit _C/W C/W 1.8 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Guaranteed by design, not subject to production testing. Document Number: 71874 S-20826—Rev. A, 17-Jun-02 www.vishay.com 1
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