DCA010
Very High-Speed Switching Diode
www.onsemi.com
Features
Ideally suited for use in hybrid ICs because of very small-sized package
Fast switching speed • Small interterminal capacitance
•
•
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Raitings
Unit
Peak Reverse Voltage
VRM
85
V
Reverse Voltage
VR
80
V
Peak Forward Current
IFM
Unit rating
300
mA
Total rating
450
mA
IO
Unit rating
100
mA
Total rating
150
mA
Surge Current(1µs)
IFSM
Unit rating
4
Total rating
6
Allowable Power Dissipation
P
Junction Temperature
Tj
Storage Temperature
Tstg
Average Rectified Current
A
A
200
mW
125
°C
--55to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Raitings
Conditions
min
typ
max
VF1
IF=1mA
0.61
VF2
IF=10mA
0.74
VF3
IF=100mA
IR1
VR=30V
Interterminal Capacitance
IR2
C
Reverse Recovery Time
trr
Unit
Forward Voltage
Reverse Current
Marking:W5
V
V
1.20
V
0.1
mA
VR=80V
0.5
mA
VR=0V, f=1MHz
4.0
pF
IF=10mA, VR=6V, RL=50W, Irr=0.1Irp
4.0
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Reverse Recovery Time Test Circuit
Package Dimensions
0.01µF
0.4
1.5
2.5
3
0.5
unit:mm(typ.)
0
50W
0.16
--6V
0 to 0.1
50ns
0.8
1.1
1 0.95 0.95 2
1.9
2.9
0.5
Electrical Connection
2kW
IF=10mA
50W
0.1Irp
Irp
trr
Anode
1 : Cathode
2 : Cathode
3 : Anode
3
CP
1
Cathode
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
©Semiconductor Components Industries, LLC, 2014
December 2014 - Rev. 0
DUT
1
2
(Top view)
Cathode
Publication Order Nunber:
DCA010/D
