2SK3050
Transistors
10V Drive Nch MOS FET
2SK3050
External dimensions (Unit : mm)
Structure
Silicon N-channel MOSFET
CPT3
6.5
5.1
2.3
2.5
0.9
1.5
5.5
Features
1) Low on-resistance.
2) Fast switching speed.
3) Wide SOA (safe operating area).
4) Gate-source voltage (VGSS)
guaranteed to be ±30V.
5) Drive circuits can be simple.
6) Parallel use is easy.
0.75
0.8Min.
0.65
0.9
(1)Gate
2.3
(1)
(2)
(3)
2.3
0.5
1.0
(2)Drain
(3)Source
9.5
1.5
0.5
Abbreviated symbol : K3050
Applications
Switching
Packaging specifications
Inner circuit
Package
Taping
Type
Drain
TL
Code
Basic ordering unit (pieces)
2500
2SK3050
Gate
∗1
Absolute maximum ratings (Ta=25°C)
Symbol
Limits
Unit
Drain-source voltage
VDSS
600
V
Gate-source voltage
VGSS
±30
V
Parameter
Continuous
ID
Pulsed
Drain current
IDP
Reverse drain
current
Continuous
IDRP
Source current
(Body Diode)
Continuous
ISP
2
A
6
A
2
A
∗1
6
A
IS
Pulsed
A
A
∗1
IDR
Pulsed
2
6
Source
∗1 BODY DIODE
∗1
Avalanche Current
IAS
∗2
2
A
Avalanche Energy
EAS
∗2
21
mJ
Total power dissipation (Tc=25°C)
PD
20
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to +150
°C
∗1 Pw≤10µs, Duty cycle≤1%
∗2 L 10mH, VDD=50V, RG=25Ω, 1Pulse, Tch=25°C
Thermal resistance
Parameter
Channel to case
Symbol
Limits
Unit
Rth(ch-c)
6.25
°C/W
Rev.A
1/5
