Super Fast Recovery Diode
Datasheet
RF501BM2SFH
Series
AEC-Q101 Qualified
Land Size Figure (Unit : mm)
Dimensions (Unit : mm)
6.0
Application
1.6
1.6
General rectification
1
3.0 2.0
6.0
Standard Fast Recovery
2.3 2.3
TO-252
Cathode
Features
Structure
2) Low forward voltage
ROHM : TO-252
JEITA : SC-63
1
: Manufacture Date
Open
Taping Dimensions (Unit : mm)
Construction
2.0±0.05
φ1.55±0.1
1.550.1
0
8.0±0.1
0.4±0.1
2.5±0.1
4.0±0.1
Anode
10.1±0.1
0～0.5
6.8±0.1
φ3.0±0.1
3.00.1
8.0±0.1
13.5±0.2
TL
16.0±0.2
7.5±0.05
Silicon epitaxial planar type
10.1±0.1
1) Low switching loss
2.7±0.2
Absolute Maximum Ratings (Ta= 25°C)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
VRM
Duty≦0.5
200
V
Reverse voltage
VR
Direct voltage
200
V
Average rectified foward current
Io
60Hz half sin wave , Resistive load
5
A
IFSM
60Hz half sin wave ,Non-repetitive at Tj=25°C
40
A
Tj
-
150
°C
Tstg
-
55 to 150
°C
Forward current surge peak
Operating junction temperature
Storage temperature
Electrical Characteristics (Tj = 25°C)
Parameter
Symbol
Conditions
Min.
Forward voltage
VF
IF=5A
-
0.85 0.92
V
Reverse current
IR
VR=200V
-
0.05
1
A
Reverse recovery time
trr
IF=0.5A, IR=1A, Irr=0.25×IR
-
15
25
ns
Rth(j-c)
Junction to case
-
-
Thermal resistance
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1/4
Typ. Max. Unit
6.0 °C / W
2015.01- Rev.A
Data Sheet
RF501BM2SFH
Electrical Characteristic Curves
100
TRANSIENT
THERMAL IMPEDANCE : Rth (°C/W)
1000
PEAK SURGE
FORWARD CURRENT : IFSM(A)
Tj = 25°C
100
10
IFSM
time
1
1
10
Rth(j-a)
10
Rth(j-c)
1
0.1
0.001
100
0.01
TIME : t(ms)
IFSM-t CHARACTERISTICS
0.1
1
10
100
1000
TIME : t(s)
Rth-t CHARACTERISTICS
Io
0A
0V
Io
0A
0V
T
D.C.
8
7
D=t/T
VR=VRmax
Tj=150°C
D = 0.5
6
half sin wave
5
4
D = 0.2
3
2
D = 0.1
T
9
D=t/T
VR=VRmax
Tj=150°C
8
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
9
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
VR
t
VR
t
1
D.C.
7
D = 0.5
6
5
half sin wave
4
3
D = 0.2
2
D = 0.1
1
0
0
0
30
60
90
120
0
150
AMBIENT TEMPERATURE : Ta(°C)
DERATING CURVE (Io-Ta)
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© 2015 ROHM Co., Ltd. All rights reserved.
30
60
90
120
150
CASE TEMPERATURE : Tc(°C)
DERATING CURVE (Io-Tc)
3/4
2015.01- Rev.A
