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2SC4881F
2SC4881 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4881 High-Current Switching Applications • Low saturation voltage: VCE (sat) = 0.4 V (max) • Unit: mm High-speed switching: tstg = 0.8 μs (typ.) Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V DC IC 5 Pulse ICP 8 IB 1 Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range PC 2.0 20 A A W Tj 150 °C Tstg −55 to 150 °C JEDEC ― JEITA ― TOSHIBA 2-10R1A Note: Using continuously under heavy loads (e.g. the application of high Weight: 1.7 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-10
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