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2SA1744-AZ

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DATA SHEET SILICON POWER TRANSISTOR 2SA1744 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1744 is a power transistor developed for high-speed PACKAGE DRAWING (UNIT: mm) switching and features a high hFE at Low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, a small resin-molded insulation type package contributes to high-density mounting and reduction of mounting cost. FEATURES • High hFE and low VCE(sat): hFE ≥ 100 (VCE = −2 V, IC = −3 A) VCE(sat) ≤ 0.3 V (IC = −8 A, IB = −0.4 A) • Full-mold package that does not require an insulating board or bushing Electrode Connection 1. Base 2. Collector 3. Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C) ° Parameter Symbol Ratings Unit Collector to base voltage VCBO −100 V Collector to emitter voltage VCEO −60 V Emitter to base voltage VEBO −7.0 V Collector current (DC) IC(DC) −15 A IC(pulse)* −30 A IB(DC) −7.5 A Total power dissipation PT (Tc = 25°C) 30 W Total power dissipation PT (Ta = 25°C) 2.0 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Collector current (pulse) Base current (DC) * PW ≤ 300 µs, duty cycle ≤ 10% The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D13160EJ1V0DS00 (1st edition) Date Published April 2002 N CP(K) Printed in Japan © 2002

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