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2SK2638-01MR
2SK2638-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings Equivalent circuit schematic (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol V DS ID ID(puls] VGS IAR *2 EAS *1 PD Tch Tstg Ratings 450 ±10 ±40 ±35 10 86.2 50 +150 -55 to +150 Unit V A A V A mJ W °C °C Drain(D) 行r new 移 fo *1 L=1.58mH, Vcc=45V . 種e 機 d Gate(G) n sig Source(S) < *2 Tch=150°C 守mend 保m Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current N Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge eco r ot Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV V SD t rr Qrr Min. Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=450V VGS=0V VGS=±35V VDS=0V ID=5A VGS=10V 450 3.5 Tch=25°C Tch=125°C ID=5A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V ID=10A VGS=10V 3 RGS=10 Ω L=100 µH Tch=25°C IF=2xIDR VGS=0V Tch=25°C IF=IDR VGS=0V -di/dt=100A/µs Tch=25°C Typ. Max. 4.0 4.5 10 500 0.2 1.0 10 100 0.58 0.65 6 950 1450 180 270 80 120 25 40 70 110 70 110 50 80 10 1.1 400 5.0 1.65 Units V V µA mA nA Ω S pF ns A V ns µC Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. Units 2.5 62.5 °C/W °C/W 1
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