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WD1200UE
http://www.fujielectric.com/products/semiconductor/ 1MBI1200UE-330 IGBT Modules IGBT MODULE (U series) 3300V / 1200A / 1 in one package Features AISiC Baseplate AIN DCB substrate CTI ≥ 600 Viso 6000 Vac Low Inductance module structure Applications Traction drives Industrial motor drives Wind power Chopper Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Items Collector-Emitter voltage Gate-Emitter voltage Conditions Ic Collector current Symbols VCES VGES Continuous Ic pulse 1ms -Ic -Ic pulse Collector power dissipation PC Junction temperature Tj Storage temperature Tstg Isolation voltage Between terminal and copper base (*1) Viso TC =25°C TC =80°C TC =25°C TC =80°C 1ms 1 device AC : 1min. AC, Q≤10pC (acc. To IEC 1287) Partial discharge extinction voltage Ve Screw torque (*2) Maximum ratings 3300 ±20 2000 1200 4000 2400 1200 2400 14.7 150 -40 ~ +125 6.0 Units V V 2.6 kVAC 5.75 10 2.5 N·m Mounting Main Terminals Sense Terminals A kW °C kVAC Note *1: All terminals should be connected together when isolation test will be done. Note *2: Recommendable value : Mounting : 4.25-5.75 N·m (M6), Main Terminal : 8-10 N·m (M8), Sense Terminal : 1.7-2.5 N·m (M4) 1 7547 SEPTEMBER 2013
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