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LNJ214R8ARA
This product complies with the RoHS Directive (EU 2002/95/EC). LNJ214R8ARA Surface Mounting Chip LED USS Type Absolute Maximum Ratings Ta = 25°C Symbol Rating Power dissipation PD 40 mW Forward current IF 15 mA Pulse forward current * IFP 50 mA Reverse voltage VR 3 V Operating ambient temperature Topr –30 to +85 °C Storage temperature Tstg –40 to +100 Red Unit °C d pla inc Pl ea ne lud se pla m d m es vis ne ain ain foll htt it d te t o p:/ fo llo dis disc nan enan wing /w ww win con on ce ce fo .se g U tin tin typ ty ur mi RL ued ued e pe Pro co a du Relative luminous intensity ty n.p bo (%)e type ct p life d an ut cy as lat cle on es ic. t in sta co fo ge .jp rm . /en ati on . M Di ain sc te on na tin nc ue e/ d Parameter Lighting Color Note) *: The condition of IFP is duty 10%, Pulse width 1 msec. Electro-Optical Characteristics Ta = 25°C±3°C Parameter Symbol Luminous intensity * IO Reverse current IR Forward voltage VF Peak emission wavelength λP Spectral half band width Δλ Note) *: Measurement tolerance: ±20% IO I F 2.75 6.7 VR = 3 V Max 100 Unit mcd µA IF = 10 mA 1.72 IF = 10 mA 655 nm IF = 10 mA 20 nm IF VF 103 isc on tin 10 en an ce /D 1 1 10 10 2.5 V Relative luminous intensity Ta 102 1 102 Ma 10−1 Typ ue Forward current IF (mA) Min IF = 10 mA 102 int Luminous intensity IO (mcd) 102 Conditions Forward current IF (mA) 1.6 1.8 2.0 2.2 10 2.4 −20 Forward voltage VF (V) Relative luminous intensity λP 0 20 40 60 80 100 Ambient temperature Ta (°C) IF Ta 100 Directive characteristics 80 30° 60 20° 10° 40° 0 650 700 Peak emission wavelength λP (nm) Publication date: October 2011 90° 100 40° 50° 60° 70° 20° 80° 600 30° 40° 70° 550 20° 60° 60° 20 10° 80° 50° 40 0° 80 60 40 20 0 Forward current IF (mA) Relative luminous intensity (%) 25 20 15 10 5 80° 20 40 60 Relative luminous intensity (%) Ver. BEK 80 90° 100 0 0 20 40 60 80 100 Ambient temperature Ta (°C) 1
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