TC7WH126FU/FK
TOSHIBA CMOS Digital Integrated Circuit
Silicon Monolithic
TC7WH126FU, TC7WH126FK
Bus Buffer with 3-STATE Output
TC7WH126FU
Features
•
High speed: tpd = 3.8 ns (typ.) at VCC = 5.0V, CL = 15pF
•
Low power dissipation: ICC = 2μA (max) at Ta = 25°C
•
High noise immunity: VNIH = VNIL = 28% VCC (min)
•
5.5 V tolerant inputs
•
Balanced propagation delays : tpLH ≈ tpHL
(SM8)
•
Wide operating voltage range: VCC = 2.0 to 5.5V
•
Low Noise : VOLP = 0.8V (max)
TC7WH126FK
Marking
(US8)
SM8
Product name
H 126
US8
Lot. No
Weight
SSOP8-P-0.65 : 0.02 g (typ.)
SSOP8-P-0.50A : 0.01 g (typ.)
WH
126
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Supply voltage
VCC
−0.5 to 7.0
V
DC input voltage
VIN
−0.5 to 7.0
V
DC output voltage
VOUT
−0.5 to VCC + 0.5
V
Input diode current
IIK
−20
mA
Output diode current
IOK
±20 (Note1)
mA
DC output current
IOUT
±25
mA
DC VCC/ground current
ICC
±50
mA
Power dissipation
PD
300(SM8)
200(US8)
mW
Storage temperature
Tstg
−65 to 150
°C
TL
260
Pin Assignment (top view)
°C
Lead temperature (10 s)
G1 1
8 VCC
A1 2
7 G2
Y2 3
6 Y1
GND 4
5 A2
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1:VOUTVCC
1
2009-09-21
