GI750, GI751, GI752, GI754, GI756, GI758
www.vishay.com
Vishay General Semiconductor
High Current Axial Plastic Rectifier
FEATURES
• Low forward voltage drop
• Low leakage current, IR less than 0.1 μA
• High forward current capability
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
P600
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters, and freewheeling diodes application.
PRIMARY CHARACTERISTICS
IF(AV)
6.0 A
VRRM
50 V, 100 V, 200 V, 400 V, 600 V,
800 V
IFSM
400 A
IR
5.0 μA
VF
0.9 V, 0.95 V
TJ max.
150 °C
Package
MECHANICAL DATA
Case: P600, void-free molded epoxy body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
P600
Diode variations
Note
• These devices are not AEC-Q101 qualified.
Single die
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
per
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
GI750
GI751
GI752
GI754
GI756
GI758
UNIT
Maximum repetitive peak reverse voltage
VRRM
50
100
200
400
600
800
V
Maximum RMS voltage
VRMS
35
70
140
280
420
560
V
Maximum DC blocking voltage
VDC
50
100
200
400
600
800
V
Maximum non-repetitive peak reverse voltage
VRSM
60
120
240
480
720
1200
V
Maximum average
forward rectified
current at
TA =60 °C, PCB mounting (fig. 1)
TL = 60 °C,0.125" (3.18 mm)
lead length (fig. 2)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Operating junction and storage temperature range
6.0
IF(AV)
A
22
IFSM
400
A
TJ, TSTG
- 50 to + 150
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous
forward voltage at
6.0 A
Maximum DC reverse current
at rated DC blocking voltage
SYMBOL
VF
100 A
TA = 25 °C
TA = 100 °C
IR
GI750
GI751
GI752
GI754
GI756
GI758
0.90
0.95
1.25
1.30
UNIT
V
5.0
μA
1.0
mA
Typical reverse recovery time
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
2.5
μs
Typical junction capacitance
4.0 V, 1 MHz
CJ
150
pF
Revision: 01-Aug-13
Document Number: 88627
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
