NTMS7N03R2
Power MOSFET
7 Amps, 30 Volts
N−Channel SOIC−8
Features
•
•
•
•
•
•
•
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Ultra Low RDS(on)
Higher Efficiency Extending Battery Life
Logic Level Gate Drive
Miniature SOIC−8 Surface Mount Package
Avalanche Energy Specified
IDSS Specified at Elevated Temperature
Pb−Free Package is Available
7 AMPERES
30 VOLTS
RDS(on) = 23 mW
N−Channel
D
Typical Applications
•
•
•
•
•
DC−DC Converters
Power Management
Motor Controls
Inductive Loads
Replaces MMSF7N03HD, MMSF7N03Z, and MMSF5N03HD
in Many Applications
G
S
MARKING
DIAGRAM
8
SOIC−8
CASE 751
STYLE 13
8
1
E7N03
AYWWG
G
1
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
N−C
1
8
Drain
Source
2
7
Drain
Source
3
6
Drain
Gate
4
5
Drain
Top View
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2005
June, 2005 − Rev. 4
1
Publication Order Number:
NTMS7N03R2/D
NTMS7N03R2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
30
−
−
41
−
−
−
−
0.02
−
1.0
10
−
−
100
1.0
−
1.6
4.0
3.0
−
−
−
18.6
23.5
Unit
23
28
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Notes 5 and 7)
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
IGSS
mV/°C
mAdc
IDSS
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
Vdc
nAdc
ON CHARACTERISTICS
Gate Threshold Voltage (Note 5)
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
Static Drain−to−Source On−Resistance (Notes 5 and 7)
(VGS = 10 Vdc, ID = 7.0 Adc)
(VGS = 4.5 Vdc, ID = 3.5 Adc)
RDS(on)
Drain−to−Source On−Voltage (VGS = 10 Vdc, ID = 5.0 Adc) (Notes 5 and 7)
VDS(on)
−
93
115
mV
gFS
3.0
13
−
Mhos
Ciss
−
1064
1190
pF
Coss
−
300
490
Crss
−
94
120
td(on)
−
15
30
tr
−
71
185
td(off)
−
27
70
tf
−
38
80
td(on)
−
8.0
−
tr
−
38
−
td(off)
−
33
−
Forward Transconductance (VDS = 15 Vdc, ID = 2.0 Adc) (Note 5)
Vdc
mV/°C
mW
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
(VDD = 10 Vdc, ID = 5.0 Adc,
VGS = 4.5 Vdc,
RG = 9.1 W) (Note 5)
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
(VDD = 10 Vdc, ID = 5.0 Adc,
VGS = 10 Vdc,
RG = 9.1 W) (Note 5)
Rise Time
Turn−Off Delay Time
Fall Time
tf
49
−
26
43
Q1
−
3.1
−
Q2
−
6.0
−
Q3
−
5.5
−
VSD
−
0.82
1.1
−
0.67
−
trr
−
27
−
ta
−
15
−
tb
−
11.5
−
QRR
(VDS = 16 Vdc, ID = 5.0 Adc,
VGS = 10 Vdc) (Note 5)
−
QT
Gate Charge
−
0.02
−
ns
nC
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (Note 5)
(IS = 7.0 Adc, VGS = 0 Vdc) (Note 5)
(IS = 7.0 Adc, VGS = 0 Vdc,
TJ = 125°C)
Reverse Recovery Time
(IS = 7.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms) (Note 5)
Reverse Recovery Stored Charge
5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperature.
7. Reflects Typical Values.
Cpk +
ŤMax limit * TypŤ
3 S
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3
Vdc
ns
mC
