TC74VHC138F/FT/FK
TOSHIBA CMOS Digital Integrated Circuit
Silicon Monolithic
TC74VHC138F,TC74VHC138FT,TC74VHC138FK
3-to-8 Line Decoder
The TC74VHC138 is an advanced high speed CMOS 3-to-8
DECODER fabricated with silicon gate C2MOS technology.
It achieves the high speed operation similar to equivalent
Bipolar Schottky TTL while maintaining the CMOS low power
dissipation.
When the device is enabled, 3 Binary Select inputs (A, B and C)
determine which one of the outputs ( Y0 - Y7 ) will go low.
When enable input G1 is held low or either G2A or G2B is held
high, decoding function is inhibited and all outputs go high.
G1, G2A , and G2B inputs are provided to ease cascade
connection and for use as an address decoder for memory
systems.
An input protection circuit ensures that 0 to 5.5 V can be
applied to the input pins without regard to the supply voltage.
This device can be used to interface 5 V to 3 V systems and two
supply systems such as battery back up. This circuit prevents
device destruction due to mismatched supply and input voltages.
TC74VHC138F
TC74VHC138FT
Features
TC74VHC138FK
•
High speed: tpd = 5.7 ns (typ.) at VCC = 5 V
•
Low power dissipation: ICC = 4 μA (max) at Ta = 25°C
•
High noise immunity: VNIH = VNIL = 28% VCC (min)
•
•
Power down protection is provided on all inputs.
Balanced propagation delays: tpLH ∼ tpHL
−
•
Wide operating voltage range: VCC (opr) = 2 V to 5.5 V
•
Pin and function compatible with 74ALS138
Weight
SOP16-P-300-1.27A
TSSOP16-P-0044-0.65A
VSSOP16-P-0030-0.50
1
: 0.18 g (typ.)
: 0.06 g (typ.)
: 0.02 g (typ.)
2012-02-29
TC74VHC138F/FT/FK
Logic Diagram
15
A
Y0
14
1
Y1
13
Select
inputs
B
Y2
12
2
Y3
11
C
Y4
10
3
Y5
9
Y6
7
G2 A
Enable
inputs
G 2B
G1
Data
outputs
Y7
4
5
6
Absolute Maximum Ratings (Note)
Characteristics
Supply voltage range
DC input voltage
Symbol
Rating
Unit
VCC
−0.5 to 7.0
V
V
VIN
−0.5 to 7.0
DC output voltage
VOUT
−0.5 to VCC + 0.5
V
Input diode current
IIK
−20
mA
Output diode current
IOK
±20
mA
DC output current
IOUT
±25
mA
DC VCC/ground current
ICC
±75
mA
Power dissipation
PD
180
mW
Storage temperature
Tstg
−65 to 150
°C
Note:
Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or
even destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Operating Ranges (Note)
Characteristics
Supply voltage
Input voltage
Output voltage
Operating temperature
Input rise and fall time
Note:
Symbol
Rating
Unit
VCC
2.0 to 5.5
V
VIN
0 to 5.5
V
VOUT
0 to VCC
V
−40 to 85
°C
Topr
dt/dv
0 to 100 (VCC = 3.3 ± 0.3 V)
0 to 20 (VCC = 5 ± 0.5 V)
ns/V
The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either VCC or GND.
3
2012-02-29
