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RJP020N06FMTT100
RJP020N06 RJP020N06FRA Transistors AEC-Q101 Qualified 2.5V Drive Nch MOS FET RJP020N06 FRA zStructure Silicon N-channel MOS FET zExternal dimensions (Unit : mm) MPT3 (2) (3) 1.0 (1) 0.5 0.4 1.5 zApplications Switching 0.4 0.4 1.5 3.0 (1)Gate (2)Drain (3)Source zPackaging specifications Abbreviated symbol : LS zInner circuit Package DRAIN Taping Code T100 Basic ordering unit (pieces) Type 1.5 2.5 4.0 zFeatures 1) Low On-resistance. 2) Low voltage drive (2.5V drive). 0.5 4.5 1.6 1000 RJP020N06 FRA ∗2 GATE ∗1 SOURCE ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE zAbsolute maximum ratings (Ta=25qC) Parameter Drain-source voltage Gate-source voltage Continuous Pulsed Continuous Pulsed Drain current Source current (Body diode) Total power dissipation Channel temperature Range of storage temperature Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD Tch Tstg Limits 60 ±12 ±2.0 ±8.0 2.0 8.0 500 2 ∗2 150 −55 to +150 Unit V V A A A A mW W °C °C Limits 250 62.5 ∗ Unit °C/W °C/W + + ∗1 Pw≤10μs, Duty cycle≤1% ∗2 When mounted on a 40 40 0.7mm ceramic board zThermal resistance Parameter Channel to ambient Symbol Rth(ch-a) + + ∗ When mounted on a 40 40 0.7mm ceramic board 1/2
ROHM
ローム株式会社
日本
炭素皮膜抵抗の特許を元に創業した。社名のROHM（R:抵抗 Ohm:抵抗を示す単位）はそこに由来する。その後、大規模集積回路の製造を手がけ始め、現在は様々な機能を顧客の要望に応じてLSI上に集積するカスタムLSIが主力となっている。
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