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部品型式

RTQ045N03TR

製品説明
仕様・特性

RTQ045N03 Transistors 2.5V Drive Nch MOS FET RTQ045N03 External dimensions (Unit : mm) Structure Silicon N-channel MOS FET TSMT6 SOT-457T 1.0MAX 2.9 1.9 0.95 0.95 (6) 0.85 0.7 (4) 1.6 2.8 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT6) . (5) 0~0.1 0.3~0.6 (2) (1) (3) 1pin mark 0.16 0.4 Each lead has same dimensions Abbreviated symbol : QM Application Power switching, DC / DC converter. Packaging specifications Package Type Equivalent circuit Taping (6) (4) (5) (6) (5) (4) (1) (2) (3) TR Code Basic ordering unit (pieces) 3000 ∗2 RTQ045N03 ∗1 Absolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Total power dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg (1) Limits 30 12 ±4.5 ±18 1.0 4.0 1.25 150 −55~+150 Unit V V A A A A W °C °C (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1) Drain (2) Drain (3) Gate (4) Source (5) Drain (6) Drain ∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded. ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board. Thermal resistance Parameter Channel to ambient Symbol Rth (ch-a) ∗ Limits 100 Unit °C / W ∗ Mounted on a ceramic board. Rev.C 1/3 RTQ045N03 Transistors Electrical characteristic curves Ta=25°C f=1MHz VGS=0V 10 0.01 0.1 1 10 tr 10 td (on) 1 0.01 100 0.1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) DRAIN CURRENT : ID (A) 1 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0.1 0.01 0.001 0.0 0.5 1.0 1.5 2.0 2.5 3.0 100 10 1 0.1 1 10 0 1 2 3 4 5 6 7 10 ID=2.25A 50 ID=4.5A 0 0 1 2 3 4 5 6 7 8 9 10 1 VGS=0V Pulsed 10 1 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0.01 0.0 0.5 1.0 1.5 Fig.6 Source Current vs. Source-Drain Voltage 100 1 0.1 10 SOURCE-DRAIN VOLTAGE : VSD (V) VGS=4V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 9 0.1 Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 1000 8 Fig.3 Dynamic Input Characteristics GATE-SOURCE VOLTAGE : VGS (V) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) VGS=4.5V Pulsed 1 0.5 Ta=25°C Pulsed Fig.4 Typical Transfer Characteristics Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 2 1.5 TOTAL GATE CHARGE : Qg (nC) 100 GATE-SOURCE VOLTAGE : VGS (V) 1000 3 2.5 0 10 Fig.2 Switching Characteristics Fig.1 Typical Capacitance vs. Drain-Source Voltage VDS=10V Pulsed 1 5 Ta=25°C 4.5 VDD=15V ID=4.5A 4 RG=10Ω 3.5 Pulsed DRAIN CURRENT : ID (A) DRAIN-SOURCE VOLTAGE : VDS (V) 10 GATE-SOURCE VOLTAGE : VGS (V) Crss tf td (off) 100 SOURCE CURRENT : Is (A) Coss 100 Ta=25°C VDD=15V VGS=4.5V RG=10Ω Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) CAPACITANCE : C (pF) Ciss SWITCHING TIME : t (ns) 1000 1000 10 1000 VGS=2.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 100 10 1 0.1 1 10 DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current (Ι) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙ) Fig.9 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙΙ) Rev.C 3/3

ブランド

ROHM

会社名

ローム株式会社

本社国名

日本

事業概要

炭素皮膜抵抗の特許を元に創業した。社名のROHM(R:抵抗 Ohm:抵抗を示す単位)はそこに由来する。その後、大規模集積回路の製造を手がけ始め、現在は様々な機能を顧客の要望に応じてLSI上に集積するカスタムLSIが主力となっている。

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