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Old Company Name in Catalogs and Other Documents
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Issued by: Renesas Electronics Corporation (http://www.renesas.com)
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1901
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
PACKAGE DRAWING (Unit : mm)
DESCRIPTION
• 2.5 V drive available
• Low on-state resistance
RDS(on)1 = 39 mΩ MAX. (VGS = 4.5 V, ID = 3.5 A)
RDS(on)2 = 40 mΩ MAX. (VGS = 4.0 V, ID = 3.5 A)
RDS(on)3 = 54 mΩ MAX. (VGS = 2.5 V, ID = 3.5 A)
+0.1
0.65–0.15
0.16+0.1
–0.06
6
5
4
1
2
3
1.5
FEATURES
0.32 +0.1
–0.05
2.8 ±0.2
The µ PA1901 is a switching device, which can be driven
directly by a 2.5 V power source.
This device features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
0 to 0.1
0.95
0.65
0.95
1.9
0.9 to 1.1
2.9 ±0.2
ORDERING INFORMATION
1, 2, 5, 6 : Drain
3
: Gate
4
: Source
PART NUMBER
PACKAGE
µ PA1901TE
SC-95 (Mini Mold Thin Type)
EQUIVALENT CIRCUIT
Marking : TQ
Drain
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±12
V
Drain Current (DC) (TA = 25°C)
Drain Current (pulse)
ID(DC)
±6.5
A
ID(pulse)
±26
A
PT1
Note1
0.2
W
PT2
2.0
W
Total Power Dissipation
Total Power Dissipation
Body
Diode
Gate
Note2
Channel Temperature
Tch
150
Tstg
–55 to +150
Source
°C
Storage Temperature
Gate
Protection
Diode
°C
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on FR-4 board, t ≤ 5 sec.
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G15804EJ1V0DS00 (1st edition)
Date Published June 2002 NS CP(K)
Printed in Japan
©
2002
