Power Transistor (-60V, -3A)
2SB1184 / 2SB1243
Dimensions (Unit : mm)
2SB1184
2SB1243
2.3 +0.2
−0.1
0.5±0.1
0.55±0.1
1.0±0.2
(1)
(2)
14.5±0.5
0.65Max.
0.9
2.3±0.2 2.3±0.2
4.4±0.2
0.9
9.5±0.5
2.5
0.65±0.1
0.75
2.5±0.2
6.8±0.2
0.5±0.1
1.5
Structure
Epitaxial planar type
PNP silicon transistor
C0.5
0.9
5.5 +0.3
−0.1
1.5±0.3
6.5±0.2
5.1 +0.2
−0.1
1.0
Features
1) Low VCE(sat).
VCE(sat) = -0.5V (Typ.)
(IC/IB = -2A / -0.2A)
2) Complements the 2SD1760 / 2SD1864.
(3)
2.54 2.54
1.05
(1) (2) (3)
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
ROHM : ATV
0.45±0.1
(1) Emitter
(2) Collector
(3) Base
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
−60
V
Collector-emitter voltage
VCEO
−50
V
Emitter-base voltage
VEBO
−5
V
Collector current
IC
−3
A (DC)
Collector power 2SB1184
dissipation
2SB1243
PC
1
15
W
W (TC=25°C)
1
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to 150
°C
∗1
∗1 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger.
Electrical characteristics (Ta=25C)
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
BVCBO
−60
−
−
V
Collector-emitter breakdown voltage
BVCEO
−50
−
−
V
IC= −1mA
Emitter-base breakdown voltage
BVEBO
−5
−
−
V
IE= −50μA
Collector cutoff current
ICBO
−
−
−1
μA
VCB= −40V
Emitter cutoff current
IEBO
−
−
−1
μA
VEB= −4V
VCE(sat)
−
−
−1
V
IC/IB= −2A/ −0.2A
∗
hFE
120
−
390
−
VCE= −3V, IC= −0.5A
∗
fT
−
70
−
MHz
Cob
−
50
−
pF
Parameter
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗ Measured using pulse current.
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○ 2010 ROHM Co., Ltd. All rights reserved.
1/3
Conditions
IC= −50μA
VCE= −5V, IE=0.5A, f=30MHz
VCB= −10V, IE=0A, f=1MHz
2010.02 - Rev.C
